STB16N65M5, STD16N65M5 دیتاشیت

STB16N65M5, STD16N65M5

مشخصات دیتاشیت

نام دیتاشیت STB16N65M5, STD16N65M5
حجم فایل 864.808 کیلوبایت
نوع فایل pdf
تعداد صفحات 19

مشاهده دیتاشیت STB16N65M5, STD16N65M5

دانلود دیتاشیت

سایر مستندات

STD16N65M5 19 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STD16N65M5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 90W
  • Total Gate Charge (Qg@Vgs): 31nC@0~10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 1.25nF@100V
  • Continuous Drain Current (Id): 12A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 3pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 230mΩ@10V,6A
  • Package: DAPK
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ V
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: STD16
  • detail: N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount DPAK

محصولات مشابه